Part Number Hot Search : 
SML10S75 6020C 02111 RE030005 A8228SLH WMA2F D74LVC 1N4757
Product Description
Full Text Search
 

To Download AD835405 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 1 MHz to 2.7 GHz RF Gain Block AD8354
FEATURES
Fixed gain of 20 dB Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dBm Input/output internally matched to 50 Temperature and power supply stable Noise figure: 4.2 dB Power supply: 3 V or 5 V
FUNCTIONAL BLOCK DIAGRAM
BIAS AND VREF
VPOS
INPT
VOUT
COM1
AD8354
Figure 1.
COM2
APPLICATIONS
VCO buffers General Tx/Rx amplification Power amplifier predrivers Low power antenna drivers
GENERAL DESCRIPTION
The AD8354 is a broadband, fixed-gain, linear amplifier that operates at frequencies from 1 MHz up to 2.7 GHz. It is intended for use in a wide variety of wireless devices, including cellular, broadband, CATV, and LMDS/MMDS applications. By taking advantage of ADI's high performance, complementary Si bipolar process, these gain blocks provide excellent stability over process, temperature, and power supply. This amplifier is single-ended and internally matched to 50 with a return loss of greater than 10 dB over the full operating frequency range. The AD8354 provides linear output power of nearly 4.3 dBm with 20 dB of gain at 900 MHz when biased at 3 V and an external RF choke is connected between the power supply and the output pin. The dc supply current is 24 mA. At 900 MHz, the output third-order intercept (OIP3) is greater than 18 dBm; at 2.7 GHz, the OIP3 is 14 dBm. The noise figure is 4.2 dB at 900 MHz. The reverse isolation (S12) is -33 dB at 900 MHz. The AD8354 can also operate with a 5 V power supply; in which case, no external inductor is required. Under these conditions, the AD8354 delivers 4.88 dBm with 20 dB of gain at 900 MHz. The dc supply current is 26 mA. At 900 MHz, the OIP3 is greater than 19 dBm; at 2.7 GHz, the OIP3 is 15 dBm. The noise figure is 4.4 dB at 900 MHz. The reverse isolation (S12) is -33 dB. The AD8354 is fabricated on ADI's proprietary, high performance, 25 GHz, Si complementary, bipolar IC process. The AD8354 is available in a chip scale package that uses an exposed paddle for excellent thermal impedance and low impedance electrical connection to ground. It operates over a -40C to +85C temperature range, and an evaluation board is also available.
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 (c) 2005 Analog Devices, Inc. All rights reserved.
02722-001
AD8354 TABLE OF CONTENTS
Features .............................................................................................. 1 Applications....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 5 ESD Caution.................................................................................. 5 Pin Configuration and Function Descriptions............................. 6 Typical Performance Characteristics ..............................................7 Theory of Operation ...................................................................... 13 Basic Connections...................................................................... 13 Applications..................................................................................... 14 Low Frequency Applications Below 100 MHz........................... 14 Evaluation Board ............................................................................ 15 Outline Dimensions ....................................................................... 16 Ordering Guide .......................................................................... 16
REVISION HISTORY
12/05--Rev. B to Rev. C Changes to Table 1............................................................................ 3 Changes to Table 2............................................................................ 4 Moved Figure 39 to Page 15; Renumbered Sequentially ........... 15 Changes to Ordering Guide .......................................................... 16 8/05--Rev. A to Rev. B Updated Format..................................................................Universal Changes to Product Title, Features, and General Description ... 1 Changes to Basic Connections Section........................................ 13 Added Low Frequency Applications Below 100 MHz Section. 14 Changes to Ordering Guide .......................................................... 16 Updated Outline Dimensions ....................................................... 16 6/02--Rev. 0 to Rev. A Changes to Ordering Guide ............................................................ 4 Replaced TPC 34............................................................................. 10 Updated Outline Dimensions ....................................................... 13 2/02--Revision 0: Initial Version
Rev. C | Page 2 of 16
AD8354 SPECIFICATIONS
VS = 3 V, TA = 25C, 100 nH external inductor between VOUT and VPOS, ZO = 50 , unless otherwise noted. Table 1.
Parameter OVERALL FUNCTION Frequency Range Gain Conditions Min 1 f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, -40C TA +85C f = 1.9 GHz, -40C TA +85C f = 2.7 GHz, -40C TA +85C VPOS 10%, f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin INPT f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VOUT f = 900 MHz, 1 dB compression f = 1.9 GHz f = 2.7 GHz f = 900 MHz, -40C TA +85C f = 1.9 GHz, -40C TA +85C f = 2.7 GHz, -40C TA +85C f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, f = 1 MHz, PIN = -28 dBm f = 1.9 GHz, f = 1 MHz, PIN = -28 dBm f = 2.7 GHz, f = 1 MHz, PIN = -28 dBm f = 900 MHz, f = 1 MHz, PIN = -28 dBm f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VPOS 2.7 16 -40C TA +85C 19.5 18.6 17.1 -0.97 -1.05 -1.33 0.54 0.37 0.2 -33.5 -38 -32.9 24.4 23 12.7 4.6 3.7 2.7 0.7 0.7 0.8 23.6 16.5 14.6 19 16 14.2 29.7 4.2 4.8 5.4 3 23 6.2 33 3.3 31 Typ Max 2700 Unit MHz dB dB dB dB dB dB dB/V dB/V dB/V dB dB dB dB dB dB dBm dBm dBm dB dB dB dB dB dB dBm dBm dBm dBm dB dB dB V mA mA/V A/C
Delta Gain
Gain Supply Sensitivity
Reverse Isolation (S12)
RF INPUT INTERFACE Input Return Loss
RF OUTPUT INTERFACE Output Compression Point
Delta Compression Point
Output Return Loss
DISTORTION/NOISE Output Third-Order Intercept
Output Second-Order Intercept Noise Figure
POWER INTERFACE Supply Voltage Total Supply Current Supply Voltage Sensitivity Temperature Sensitivity
Rev. C | Page 3 of 16
AD8354
VS = 5 V, TA = 25C, no external inductor between VOUT and VPOS, ZO = 50 , unless otherwise noted. Table 2.
Parameter OVERALL FUNCTION Frequency Range Gain Conditions Min 1 f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, -40C TA +85C f = 1.9 GHz, -40C TA +85C f = 2.7 GHz, -40C TA +85C VPOS 10%, f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin INPT f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VOUT f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, -40C TA +85C f = 1.9 GHz, -40C TA +85C f = 2.7 GHz, -40C TA +85C f = 900 MHz f = 1.9 GHz f = 2.7 GHz f = 900 MHz, f = 50 MHz, PIN = -30 dBm f = 1.9 GHz, f = 50 MHz, PIN = -30 dBm f = 2.7 GHz, f = 50 MHz, PIN = -30 dBm f = 900 MHz, f = 1 MHz, PIN = -28 dBm f = 900 MHz f = 1.9 GHz f = 2.7 GHz Pin VPOS TA = 27C -40C TA +85C 4.5 17 19.5 18.7 17.3 -0.93 -0.99 -1.21 0.32 0.21 0.08 -33.5 -37.6 -32.9 24.4 23.9 13.5 4.8 4.6 3.6 0.37 -0.14 -0.05 23.7 22.5 17.6 19.3 17.3 15.3 28.7 4.4 5 5.6 5 25 4 28 5.5 34 Typ Max 2700 Unit MHz dB dB dB dB dB dB dB/V dB/V dB/V dB dB dB dB dB dB dBm dBm dBm dB dB dB dB dB dB dBm dBm dBm dBm dB dB dB V mA mA/V A/C
Delta Gain
Gain Supply Sensitivity
Reverse Isolation (S12)
RF INPUT INTERFACE Input Return Loss
RF OUTPUT INTERFACE Output Compression Point
Delta Compression Point
Output Return Loss
DISTORTION/NOISE Output Third-Order Intercept
Output Second-Order Intercept Noise Figure
POWER INTERFACE Supply Voltage Total Supply Current Supply Voltage Sensitivity Temperature Sensitivity
Rev. C | Page 4 of 16
AD8354 ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Supply Voltage, VPOS Input Power (re: 50 ) Equivalent Voltage Internal Power Dissipation Paddle Not Soldered Paddle Soldered JA (Paddle Soldered) JA (Paddle Not Soldered) Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Temperature (Soldering 60 sec) Rating 5.5 V 10 dBm 700 mV rms 325 mW 812 mW 80C/W 200C/W 150C -40C to +85C -65C to +150C 240C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. C | Page 5 of 16
AD8354 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
COM1 1 NC 2
8
COM1
VOUT TOP VIEW INPT 3 (Not to Scale) 6 VPOS 5 COM2 COM2 4
7
AD8354
NC = NO CONNECT
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. 1, 8 2 3 4, 5 6 7 Mnemonic COM1 NC INPT COM2 VPOS VOUT Description Device Common. Connect to low impedance ground. No Connection. RF Input Connection. Must be ac-coupled. Device Common. Connect to low impedance ground. Positive Supply Voltage. RF Output Connection. Must be ac-coupled.
Rev. C | Page 6 of 16
02722-041
AD8354 TYPICAL PERFORMANCE CHARACTERISTICS
90 120 60
90 120 60
150
30
150
30
180
0
180
0
210
330
210
330
240 270
240 270
Figure 3. S11 vs. Frequency, VS = 3 V, TA = 25C, 100 MHz f 3 GHz
25 GAIN AT 3.3V 20
Figure 6. S22 vs. Frequency, VS = 3 V, TA = 25C, 100 MHz f 3 GHz
25
20
GAIN AT -40C
GAIN AT 2.7V
GAIN (dB)
GAIN (dB)
15
GAIN AT 3.0V
15 GAIN AT +25C GAIN AT +85C 10
10
5
5
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 4. Gain vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V, TA = 25C
0 -5
REVERSE ISOLATION (dB)
REVERSE ISOLATION (dB)
Figure 7. Gain vs. Frequency, VS = 3 V, TA = -40C, +25C, and +85C
0 -5 -10 -15 -20 -25 S12 AT -40C -30 S12 AT +25C -35
02722-004
-10 -15 -20 -25 -30 -35 S12 AT 2.7V
-40
S12 AT 3.3V
0
500
1000
1500
2000
2500
3000
-40 0
S12 AT +85C 500 1000 1500 2000 FREQUENCY (MHz) 2500 3000
FREQUENCY (MHz)
Figure 5. Reverse Isolation vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V, TA = 25C
Figure 8. Reverse Isolation vs. Frequency, VS = 3 V, TA = -40C, +25C, and +85C
Rev. C | Page 7 of 16
02722-007
S12 AT 3.0V
02722-006
0
02722-003
0
02722-005
300
02722-002
300
AD8354
7 6 P1dB AT 3.3V 5
6 P1dB AT +85C 5
4
P1dB (dBm)
P1dB (dBm)
4 3 2 1 0
02722-008
P1dB AT +25C 3 P1dB AT -40C 2
P1dB AT 3.0V P1dB (dBm) P1dB AT 2.7V
1
02722-011
-1 0 500 1000 1500 2000 2500 3000 FREQUENCY (MHz)
0 0 500 1000 1500 2000 2500 3000 FREQUENCY (MHz)
Figure 9. P1dB vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V, TA = 25C
50 45 40 35
Figure 12. P1dB vs. Frequency, VS = 3 V, TA = -40C, +25C, and +85C
50 45 40 35 30
PERCENT
PERCENTAGE
30 25 20 15 10 5 0 2.5
02722-009
25 20 15 10
02722-012
5 0 14.4 14.6 14.8 15.0 15.2 15.4 OIP3 (dBm) 15.6 15.8 16.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 OUTPUT 1dB COMPRESSION POINT (dBm)
Figure 10. Distribution of P1dB, VS = 3 V, TA = 25C, f = 2.2 GHz
22 OIP3 AT 3.3V 20
20 22
Figure 13. Distribution of OIP3, VS = 3 V, TA = 25C, f = 2.2 GHz
18
18
OIP3 (dBm)
OIP3 (dBm)
OIP3 AT +25C 16 OIP3 AT +85C 14
16 OIP3 AT 3.0V OIP3 AT 2.7V 12
02722-010
14
12
02722-013
OIP3 AT -40C
10
10
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 11. OIP3 vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V, TA = 25C
Figure 14. OIP3 vs. Frequency, VS = 3 V, TA = -40C, +25C, and +85C
Rev. C | Page 8 of 16
AD8354
6.0 5.8
6.5 6.0
5.6
NOISE FIGURE (dB)
5.2 5.0 4.8 NF AT 3.3V 4.6 4.4 NF AT 3.0V
NOISE FIGURE (dB)
5.4
5.5 5.0 NF AT +85C 4.5 NF AT +25C 4.0 NF AT -40C
02722-017
3.5
4.2 NF AT 2.7V 4.0
02722-014
3.0
0
500
1000
1500
2000
2500
3000
0
500
FREQUENCY (MHz)
1000 1500 2000 FREQUENCY (MHz)
2500
3000
Figure 15. Noise Figure vs. Frequency, VS = 2.7 V, 3 V, and 3.3 V, TA = 25C
40 35
Figure 18. Noise Figure vs. Frequency, VS = 3 V, TA = -40C, +25C, and +85C
30 IS AT 3.3V 25
SUPPLY CURRENT (mA)
30
PERCENTAGE
20 IS AT 3.0V 15
25 20 15 10 5
02722-015
IS AT 2.7V
10
5
02722-018
0 4.70 4.75 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25 NOISE FIGURE (dB)
0 -60
-40
-20
0 20 40 TEMPERATURE (C)
60
80
100
Figure 16. Distribution of Noise Figure, VS = 3 V, TA = 25C, f = 2.2 GHz
90 120 60
Figure 19. Supply Current vs. Temperature, VS = 2.7 V, 3 V, and 3.3 V
90 120 60
150
30
150
30
180
0
180
0
210
330
210
330
240 270
240 270
300
Figure 17. S11 vs. Frequency, VS = 5 V, TA = 25C, 100 MHz f 3 GHz
Figure 20. S22 vs. Frequency, VS = 5 V, TA = 25C, 100 MHz f 3 GHz
Rev. C | Page 9 of 16
02722-019
300
02722-016
AD8354
25 GAIN AT 5.5V 20
20 25 GAIN AT -40C
GAIN (dB)
GAIN (dB)
15
GAIN AT 5.0V
GAIN AT 4.5V
15
GAIN AT +25C
10 GAIN AT +85C
10
5
02722-020
5
02722-023
0 0 500 1000 1500 2000 2500 FREQUENCY (MHz)
0 0 500 1000 1500 2000 2500 FREQUENCY (MHz)
3000
3000
Figure 21. Gain vs. Frequency, VS = 4.5 V, 5 V, and 5.5 V, TA = 25C
0 -5
REVERSE ISOLATION (dB)
Figure 24. Gain vs. Frequency, VS = 5 V, TA = -40C, +25C, and +85C
0 -5
-15 -20 -25 -30 -35 -40 0 500 1000 1500 2000 FREQUENCY (MHz) 2500 3000
02722-021
REVERSE ISOLATION (dB)
-10
-10 -15 -20 -25 -30 -35 -40 0 500 1000 1500 2000 2500 FREQUENCY (MHz)
02722-024
S12 AT 4.5V S12 AT 5.0V S12 AT 5.5V
S12 AT -40C S12 AT +85C S12 AT +25C
3000
Figure 22. Reverse Isolation vs. Frequency, VS = 4.5 V, 5 V, and 5.5 V, TA = 25C
7 6
Figure 25. Reverse Isolation vs. Frequency, VS = 5 V, TA = -40C, +25C, and +85C
6 P1dB AT +85C
P1dB AT 5.5V
5 P1dB AT -40C P1dB AT +25C 3
5
4
P1dB (dBm)
4 P1dB AT 5.0V P1dB AT 4.5V 2 1 0 0 500 1000 1500 2000 FREQUENCY (MHz) 2500
3
P1dB (dBm)
2
1
02722-022
02722-025
0 0 500 1000 1500 2000 2500 3000 FREQUENCY (MHz)
3000
Figure 23. P1dB vs. Frequency, VS = 4.5 V, 5 V, and 5.5 V, TA = 25C
Figure 26. P1dB vs. Frequency, VS = 5 V, TA = -40C, +25C, and +85C
Rev. C | Page 10 of 16
AD8354
50 45
35 30
40 35
PERCENTAGE
25
30 25 20 15 10 5
02722-026
PERCENTAGE
20 15
10
0 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 OUTPUT 1dB COMPRESSION POINT (dBm)
0 16.0 16.1 16.2 16.3 16.4 16.5 16.6 16.7 16.8 16.9 17.0 17.1 17.2 OIP3 (dBm)
Figure 27. Distribution of P1dB, VS = 5 V, TA = 25C, f = 2.2 GHz
22 OIP3 AT 5.5V 20
Figure 30. Distribution of OIP3, VS = 5 V, TA = 25C, f = 2.2 GHz
22 OIP3 AT -40C 20
18
18
OIP3 AT +85C OIP3 AT +25C
OIP3 (dBm)
16 OIP3 AT 5.0V 14 OIP3 AT 4.5V
OIP3 (dBm)
16
14
12
02722-027
12
02722-030
10 0 500 1000 1500 2000 2500 FREQUENCY (MHz)
3000
10 0 500 1000 1500 2000 2500 FREQUENCY (MHz)
3000
Figure 28. OIP3 vs. Frequency, VS = 4.5 V, 5 V, and 5.5 V, TA = 25C
7.0
Figure 31. OIP3 vs. Frequency, VS = 5 V, TA = -40C, +25C, and +85C
7.5 7.0
6.5
6.5
NOISE FIGURE (dB)
NOISE FIGURE (dB)
6.0
6.0 5.5 5.0 NF AT +85C 4.5 NF AT +25C 4.0
5.5 NF AT 5.5V 5.0
02722-028
NF AT 4.5V NF AT 5.0V 4.0 0 500 1000 1500 2000 2500
3.5 3.0 0 500
NF AT -40C
3000
1000
1500
2000
2500
3000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 29. Noise Figure vs. Frequency, VS = 4.5 V, 5 V, and 5.5 V, TA = 25C
Figure 32. Noise Figure vs. Frequency, VS = 5 V, TA = -40C, +25C, and +85C
Rev. C | Page 11 of 16
02722-031
4.5
02722-029
5
AD8354
40 35
10 19 15 20
30
5 18
PERCENTAGE
POUT (dBm)
20 15 10
0
17
-5
16
-10
02722-032
15
02722-034
5 0 4.5
-15
14 -30 -25 -20 -15 PIN (dBm) -10 -5 0
4.6
4.7
4.8
4.9 5.0 5.1 5.2 NOISE FIGURE (dB)
5.3
5.4
5.5
5.6
Figure 33. Distribution of Noise Figure, VS = 5 V, TA = 25C, f = 2.2 GHz
35
Figure 35. Output Power and Gain vs. Input Power, VS = 3 V, TA = 25C, f = 900 MHz
15 20
30
IS AT 5.5V
10
19
SUPPLY CURRENT (mA)
25
5 18 GAIN (dB)
02722-035
20 IS AT 5.0V 15 10
IS AT 4.5V
POUT (dBm)
0
17
-5
16
-10
02722-033
15
5
0 -60
-40
-20
0
20
40
60
80
100
-15 -30
-25
-20
-15 PIN (dBm)
-10
-5
0
14
TEMPERATURE (C)
Figure 34. Supply Current vs. Temperature, VS = 4.5 V, 5 V, and 5.5 V
Figure 36. Output Power and Gain vs. Input Power, VS = 5 V, TA = 25C, f = 900 MHz
Rev. C | Page 12 of 16
GAIN (dB)
25
AD8354 THEORY OF OPERATION
The AD8354 is a 2-stage, feedback amplifier employing both shunt-series and shunt-shunt feedback. The first stage is degenerated and resistively loaded and provides approximately 10 dB of gain. The second stage is a PNP-NPN Darlington output stage, which provides another 10 dB of gain. Seriesshunt feedback from the emitter of the output transistor sets the input impedance to 50 over a broad frequency range. Shuntshunt feedback from the amplifier output to the input of the Darlington stage helps to set the output impedance to 50 . The amplifier can be operated from a 3 V supply by adding a choke inductor from the amplifier output to VPOS. Without this choke inductor, operation from a 5 V supply is also possible. It is critical to supply very low inductance ground connections to the ground pins (Pin 1, Pin 4, Pin 5, and Pin 8) as well as to the backside exposed paddle. This ensures stable operation. The AD8354 is designed to operate over a wide supply voltage range, from 2.7 V to 5.5 V. The output of the part, VOUT, is taken directly from the collector of the output amplifier stage. This node is internally biased to approximately 3.2 V when the supply voltage is 5 V. Consequently, a dc blocking capacitor should be connected between the output pin, VOUT, and the load that it drives. The value of this capacitor is not critical, but it should be 100 pF or larger. When the supply voltage is 3 V, it is recommended that an external RF choke be connected between the supply voltage and the output pin, VOUT. This increases the dc voltage applied to the collector of the output amplifier stage, which improves performance of the AD8354 to be very similar to the performance produced when 5 V is used for the supply voltage. The inductance of the RF choke should be approximately 100 nH, and care should be taken to ensure that the lowest series self-resonant frequency of this choke is well above the maximum frequency of operation for the AD8354. Bypass the supply voltage input, VPOS, using a large value capacitance (approximately 0.47 F or larger) and a smaller, high frequency bypass capacitor (approximately 100 pF) physically located close to the VPOS pin. The recommended connections and components are shown in Figure 40.
BASIC CONNECTIONS
The AD8354 RF gain block is a fixed gain amplifier with singleended input and output ports whose impedances are nominally equal to 50 over the frequency range 1 MHz to 2.7 GHz. Consequently, it can be directly inserted into a 50 system with no impedance matching circuitry required. The input and output impedances are sufficiently stable vs. variations in temperature and supply voltage that no impedance matching compensation is required. A complete set of scattering parameters is available at www.analog.com. The input pin (INPT) is connected directly to the base of the first amplifier stage, which is internally biased to approximately 1 V; therefore, a dc blocking capacitor should be connected between the source that drives the AD8354 and the input pin, INPT.
Rev. C | Page 13 of 16
AD8354 APPLICATIONS
The AD8354 RF gain block can be used as a general-purpose, fixed gain amplifier in a wide variety of applications, such as a driver for a transmitter power amplifier (see Figure 37). Its excellent reverse isolation also makes this amplifier suitable for use as a local oscillator buffer amplifier that would drive the local oscillator port of an upconverter or downconverter mixer (see Figure 38).
LOW FREQUENCY APPLICATIONS BELOW 100 MHz
The AD8354 RF gain block can be used below 100 MHz. To accomplish this, the series dc blocking capacitors, C1 and C2, need to be changed to a higher value that is appropriate for the desired frequency. C1 and C2 were changed to 0.1 F to accomplish the sweeps in Figure 39.
21.5 21.0 20.5 dB-S21 Mkr 1: 97.638034MHz 19.40dB
AD8354
HIGH POWER AMPLIFIER
02722-036
20.0 19.5 19.0 1
Figure 37. AD8354 as a Driver Amplifier
MIXER
18.5 18.0
AD8354
02722-037
17.5 17.0
02722-042
LOCAL OSCILLATOR
16.5 CH 1: START 300.000kHz STOP 100.000MHz
Figure 38. AD8354 as a LO Driver Amplifier
Figure 39. Low Frequency Application from 300 kHz to 100 MHz at 5 V VPOS, -12 dBm Input Power
Rev. C | Page 14 of 16
AD8354 EVALUATION BOARD
Figure 40 shows the schematic of the AD8354 evaluation board. Note that L1 is shown as an optional component that is used to obtain maximum gain only when VP = 3 V. The board is powered by a single supply in the 2.7 V to 5.5 V range. The power supply is decoupled by a 0.47 F and a 100 pF capacitor.
AD8354
1
COM1
COM1 8 C2 1000pF OUTPUT
2
NC
VOUT
7
INPUT
C1 1000pF
3
L1 INPT VPOS 6
02722-039
02722-038
C3 100pF
4
C4 0.47F
COM2
COM2 5
Figure 41. Silkscreen Top
NC = NO CONNECT
Figure 40. Evaluation Board Schematic
Table 5. Evaluation Board Configuration Options
Component C1, C2 C3 C4 L1 Function AC coupling capacitors. High frequency bypass capacitor. Low frequency bypass capacitor. Optional RF choke, used to increase current through output stage when VP = 3 V. Not recommended for use when VP = 5 V. Default Value 1000 pF, 0603 100 pF, 0603 0.47 F, 0603 100 nH, 0603
02722-040
Figure 42. Component Side
Rev. C | Page 15 of 16
AD8354 OUTLINE DIMENSIONS
3.25 3.00 2.75 2.25 2.00 1.75 0.60 0.45 0.30 1.89 1.74 1.59
5 BOTTOM VIEW 8 * EXPOSED PAD 4 1
0.55 0.40 0.30
1.95 1.75 1.55
TOP VIEW
0.15 0.10 0.05 0.25 0.20 0.15
PIN 1 INDICATOR
2.95 2.75 2.55 12 MAX 0.80 MAX 0.65 TYP
0.50 BSC
1.00 0.85 0.80
0.05 MAX 0.02 NOM 0.30 0.23 0.18 0.20 REF
SEATING PLANE
Figure 43. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD] 2 mm x 3 mm Body, Very Thin, Dual Lead CP-8-1 Dimensions shown in millimeters
ORDERING GUIDE
Model AD8354ACP-R2 AD8354ACP-REEL7 AD8354ACPZ-REEL7 1 AD8354-EVAL
1
Temperature Range -40C to +85C -40C to +85C -40C to +85C
Package Description 8-Lead LFCSP_VD, 7" Tape and Reel 8-Lead LFCSP_VD, 7" Tape and Reel 8-Lead LFCSP_VD, 7" Tape and Reel Evaluation Board
Package Option CP-8-1 CP-8-1 CP-8-1
Branding JC JC 0G
Z = Pb-free part.
(c) 2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C02722-0-12/05(C)
T T
Rev. C | Page 16 of 16


▲Up To Search▲   

 
Price & Availability of AD835405

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X